2013 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2014, Vol 43, Num 8, issn 0361-5235, 310 p.Conference Proceedings

2012 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2013, Vol 42, Num 11, issn 0361-5235, 372 p.Conference Proceedings

MBE growth of CdSeTe/Si composite substrate for long-wavelength IR HgCdTe applicationsCHEN, Y. P; BRILL, G; DHAR, N. K et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 270-274, issn 0022-0248, 5 p.Article

2002 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2003, Vol 32, Num 7, issn 0361-5235, 240 p.Conference Proceedings

2006 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2007, Vol 36, Num 8, issn 0361-5235, 292 p.Conference Proceedings

2004 U.S. workshop on the physics and chemistry of II-VI materialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2005, Vol 34, Num 6, pp 681-968, issn 0361-5235, 288 p.Conference Proceedings

Atomic-Scale Characterization of II―VI Compound SemiconductorsSMITH, David J.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3168-3174, issn 0361-5235, 7 p.Conference Paper

2007 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; ANTER, Y; DHAR, N. K et al.Journal of electronic materials. 2008, Vol 37, Num 9, issn 0361-5235, 347 p.Conference Proceedings

Epidemic hysteria masquerading as food poisoningDHAR, N. K; MEHTA, M; PANDE, P et al.Indian pediatrics. 1991, Vol 28, Num 5, pp 557-560, issn 0019-6061Article

2010 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2011, Vol 40, Num 8, issn 0361-5235, 256 p.Conference Proceedings

2009 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2010, Vol 39, Num 7, issn 0361-5235, 295 p.Conference Proceedings

Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfacesBRILL, G; CHEN, Y; DHAR, N. K et al.Journal of electronic materials. 2003, Vol 32, Num 7, pp 717-722, issn 0361-5235, 6 p.Conference Paper

Molecular-beam epitaxial growth of Cdse_xTe_1-x on Si(211)CHEN, Y. P; BRILL, G; DHAR, N. K et al.Journal of electronic materials. 2003, Vol 32, Num 7, pp 723-727, issn 0361-5235, 5 p.Conference Paper

Numerical Analysis of Radiative Recombination in Narrow-Gap Semiconductors Using the Green's Function FormalismHANQING WEN; BELLOTTI, Enrico.Journal of electronic materials. 2014, Vol 43, Num 8, pp 2841-2848, issn 0361-5235, 8 p.Conference Paper

Mid-Wavelength Infrared nBn for HOT DetectorsROGALSKI, A; MARTYNIUK, P.Journal of electronic materials. 2014, Vol 43, Num 8, pp 2963-2969, issn 0361-5235, 7 p.Conference Paper

HgCdTe: Recent Trends in the Ultimate IR SemiconductorKINCH, Michael A.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1043-1052, issn 0361-5235, 10 p.Conference Paper

Numerical Analysis of Current―Voltage Characteristics of LWIR nBn and p-on-n HgCdTe PhotodetectorsKOPYTKO, M; JOZWIKOWSKI, K.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3211-3216, issn 0361-5235, 6 p.Conference Paper

2011 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2012, Vol 41, Num 10, issn 0361-5235, 334 p.Conference Proceedings

Numerical Simulation of the Modulation Transfer Function in HgCdTe Detector ArraysPINKIE, Benjamin; BELLOTTI, Enrico.Journal of electronic materials. 2014, Vol 43, Num 8, pp 2864-2873, issn 0361-5235, 10 p.Conference Paper

Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector ArraysPINKIE, Benjamin; BELLOTTI, Enrico.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3080-3089, issn 0361-5235, 10 p.Conference Paper

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTeRHIGER, David R.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1815-1822, issn 0361-5235, 8 p.Conference Paper

Rule 07 Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?TENNANT, W. E.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1030-1035, issn 0361-5235, 6 p.Conference Paper

2003 U.S. Workshop on the Physics and Chemistry of II-VI Materials, New Orleans, Louisiana, September 17-19, 2003SIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2004, Vol 33, Num 6, issn 0361-5235, 280 p.Conference Proceedings

Evaluation of Quantum Efficiency, Crosstalk, and Surface Recombination in HgCdTe Photon-Trapping StructuresSCHUSTER, Jonathan; BELLOTTI, Enrico.Journal of electronic materials. 2014, Vol 43, Num 8, pp 2808-2817, issn 0361-5235, 10 p.Conference Paper

Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivityAMIRTHARAJ, P. M; DHAR, N. K; BAARS, J et al.Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S68-S72, issn 0268-1242Conference Paper